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Cubic GaN/AlN multiple quantum well photodetector E. A. DeCuir, Jr.,1

Summary: Cubic GaN/AlN multiple quantum well photodetector
E. A. DeCuir, Jr.,1
M. O. Manasreh,1,a
Elena Tschumak,2
J. Schörmann,2
D. J. As,2
K. Lischka2
Department of Electrical Engineering, University of Arkansas, 3217 Bell Engineering Center,
Fayetteville, Arkansas 72701, USA
Department of Physics, University of Paderborn, Paderborn 33095, Germany
Received 10 March 2008; accepted 30 April 2008; published online 22 May 2008
Photodetectors based on intersubband transitions in molecular beam epitaxially grown cubic
GaN/AlN multiple quantum wells were fabricated and tested. The presence of the intersubband
transition was confirmed by using the optical absorption technique for structures with different well
widths. Samples were polished into waveguide configuration on which the devices were fabricated.
The photoresponse spectra were collected in the temperature range of 77­215 K under the influence
of small bias voltages. All devices exhibit photovoltaic effect where the photoresponse is observed


Source: As, Donat Josef - Department Physik, Universität Paderborn


Collections: Materials Science; Physics