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EXPERIMENTAL VERIFICATION OF INTERNAL FRICTION AT GHZ FREQUENCIES IN DOPED SINGLE-CRYSTAL SILICON
 

Summary: EXPERIMENTAL VERIFICATION OF INTERNAL FRICTION AT GHZ
FREQUENCIES IN DOPED SINGLE-CRYSTAL SILICON
Eugene Hwang and Sunil A. Bhave
OxideMEMS Lab, School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA
ABSTRACT
This paper reports on the experimental verification of
the intrinsic loss mechanisms present in degenerately doped
single-crystal silicon. Previous work reported at the Hilton
Head Workshop 2010 [1] experimentally showed the
dominant acoustic loss mechanism in a 3.72-GHz silicon
resonator (Fig. 1) to be Landau-Rumer phonon-phonon
dissipation as seen from the 1/T4
temperature dependence
for temperatures as low as 77K. This work extends these
measurements to lower temperature (1.5K) and finds that
free electron scattering due to degenerate doping affects the
Q of silicon micromechanical resonators at low
temperatures and in some cases, such as in the current
resonator design, becomes comparable to anchor loss even
at room temperature.

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering