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INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 18 (2003) 723728 PII: S0268-1242(03)53905-0
 

Summary: INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Semicond. Sci. Technol. 18 (2003) 723728 PII: S0268-1242(03)53905-0
Application of the point-defect analysis
technique to zinc doping of MOCVD
indium phosphide
A J Howard1,3, B Pathangey1,3, Y Hayakawa1,4, T J Anderson1,
C Blaauw2 and A J SpringThorpe2
1
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
2
Nortel Technologies, PO Box 3511, Stn C Ottawa, Ontario K1Y 4H7, Canada
Received 25 September 2002, in final form 23 May 2003
Published 1 July 2003
Online at stacks.iop.org/SST/18/723
Abstract
Epitaxial layers of p-type indium phosphide (InP) have been grown by low
pressure, metal organic chemical vapour deposition (LP-MOCVD) using
diethylzinc (DEZn) as the p-dopant source. Proposed zinc-associated InP
point defects and experimental DEZn doping data were used to formulate a
point-defect equilibrium model of the Zn doping process of MOCVD InP.

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science