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RESEARCH PAPER Gated transport in nanofluidic devices

Gated transport in nanofluidic devices
Xiaozhong Jin ∑ N. R. Aluru
Received: 23 December 2010 / Accepted: 18 March 2011 / Published online: 10 April 2011
” Springer-Verlag 2011
Abstract The surface property of the nanochannel plays
an important role in controlling the ion transport through
the nanochannel. Embedding electrodes outside the nano-
channel (referred to as gated nanochannels) is a simple way
to control the surface charge density of the nanochannel.
Based on the numerical simulations using coupled Pois-
son≠Nernst≠Planck and Stokes equations, we show that a
relative difference between the applied voltage and the gate
voltage would alter the space charge density along the
nanochannel. Thus, the gate voltage can tune the nano-
channel into a p- or n-type field effect transistor, enabling
the control of fluid flow in the nanochannel. The ionic
currents reveal that the ionic flux can be controlled by the
gate voltage. Analytical expressions are derived to estimate
the effective space charge density and the fluid flow in the


Source: Aluru, Narayana R. - Department of Mechanical and Industrial Engineering, University of Illinois at Urbana-Champaign


Collections: Engineering; Materials Science