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ISOTROPIC ETCHING OF 111 SCS FOR WAFER-SCALE MANUFACTURING OF PERFECTLY HEMISPHERICAL SILICON MOLDS
 

Summary: ISOTROPIC ETCHING OF 111 SCS FOR WAFER-SCALE MANUFACTURING OF PERFECTLY
HEMISPHERICAL SILICON MOLDS
Laura C. Fegely, David N. Hutchison, and Sunil A. Bhave
OxideMEMS Lab, Cornell University, Ithaca, NY, USA
ABSTRACT
This paper reports the results of a side-by-side
comparison study of HF-HNO3 isotropic etching of
circular pits in <111> and <100> single crystal silicon
(SCS). These etched holes will be used as sacrificial
molds for micro-scale hemispherical resonator
gyroscopes (HRGs) made using hemispherical shell
resonators. Geometric uniformity of the mold is critical
for HRG applications in order to achieve degenerate
resonant modes and high optical and mechanical quality
factors (Q). <111> wafers were found to provide
excellent isotropic etching in the surface plane under all
tested etching conditions with an average of only ~1.4%
radial variation, as compared to ~3.2% variation for
<100> wafers. The molds tested had an average radius of
41 Ám, and depth of 35 Ám, with a maximum of radius 92

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering