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Pyroelectric response of ferroelectric thin films A. Sharma, Z.-G. Ban, and S. P. Alpaya)
 

Summary: Pyroelectric response of ferroelectric thin films
A. Sharma, Z.-G. Ban, and S. P. Alpaya)
Department of Metallurgy and Materials Engineering and Institute of Materials Science,
University of Connecticut, Storrs, Connecticut 06269
J. V. Mantese
Delphi Research Laboratories, Shelby Township, Michigan 48315
Received 27 August 2003; accepted 18 December 2003
A thermodynamic formalism is developed to calculate the pyroelectric coefficients of epitaxial 001
Ba0.6Sr0.4TiO3 BST 60/40 and Pb0.5Zr0.5O3 PZT 50/50 thin films on 001 LaAlO3 ,
0.29 LaAlO3 :0.35(Sr2TaAlO6) LSAT , MgO, Si, and SrTiO3 substrates as a function of film
thickness by taking into account the formation of misfit dislocations at the growth temperature. The
role of internal stress is discussed in detail with respect to epitaxy-induced misfit and thermal
stresses arising from the difference between the thermal expansion coefficients of the film and the
substrates. It is shown that the pyroelectric coefficients steadily increase with increasing film
thickness for BST 60/40 and PZT 50/50 on LSAT and SrTiO3 substrates due to stress relaxation by
misfit dislocations. Large pyroelectric responses 1.1 C/cm2
K for BST 60/40 and 0.3
C/cm2
K for PZT 50/50 are theoretically predicted for films on MgO substrates at critical film
thicknesses 52 nm for BST 60/40 and 36 nm for PZT 50/50 corresponding to the ferroelectric

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science