Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 3, MARCH 2011 357 High-Gain Multiple-Gate Photodetector
 

Summary: IEEE ELECTRON DEVICE LETTERS, VOL. 32, NO. 3, MARCH 2011 357
High-Gain Multiple-Gate Photodetector
With Nanowires in the Channel
Anita Fadavi Roudsari, Simarjeet S. Saini, Nixon O, and M. P. Anantram
Abstract--A design of a photodetector with multiple gates and
a modified channel, incorporating silicon nanowires, is proposed,
and its performance is modeled. Working under lateral bipolar
action, the gate/channel geometry increases the device photocur-
rent in the accumulation mode and leads to photoresponsivities of
greater than 104
A/W.
Index Terms--Lateral bipolar action, photodetector, photo-
responsivity, silicon nanowire (NW).
I. INTRODUCTION
ONE-DIMENSIONAL nanostructures offer features that
are potentially important in device application: quantum
effects due to their narrow cross section, improved electrostat-
ics, and good transport characteristics along their length. These
properties have proved to be useful in laboratory demonstra-
tions of carbon nanotube and silicon nanowire (NW) sensors

  

Source: Anantram, M. P. - Department of Electrical Engineering, University of Washington at Seattle

 

Collections: Materials Science; Computer Technologies and Information Sciences