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High dielectric tunability in ferroelectric-paraelectric bilayers and multilayer superlattices

Summary: High dielectric tunability in ferroelectric-paraelectric bilayers and multilayer
S. Zhong and S. P. Alpaya
Department of Materials Science and Engineering and Institute of Materials Science,
University of Connecticut, Storrs, Connecticut 06269
J. V. Mantese
Delphi Research Laboratories, Shelby Township, Michigan 48315
Received 4 January 2006; accepted 28 February 2006; published online 27 March 2006
The dielectric tunability of ferroelectric/paraelectric bilayers and multilayer superlattices are
examined theoretically. A numerical analysis is carried out for a pseudomorphic 001
BaTiO3/SrTiO3 heteroepitaxial bilayer on 001 SrTiO3 and a stress-free BaTiO3/SrTiO3 bilayer.
We show that these structures are capable of tunabilities greater than 90% due to electrostatic and
electromechanical coupling between layers. Moreover, we develop the methodology for
incorporation conventional integrated circuit silicon dielectrics into heteroepitaxial structures that
can reduce current leakage while maintaining high tunability, thereby enabling the device designer
flexibility toward the optimization of microwave and millimeter wave elements. 2006 American
Institute of Physics. DOI: 10.1063/1.2189909
It has been more than 40 years since ferroelectric FE
materials were recognized for their potential as high tunabil-
ity microwave and millimeter wave devices.1


Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut


Collections: Materials Science