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Summary: Mechanism-Based Design of Precursors for MOCVD
Lisa McElwee-White,a,
* Jürgen Koller,a
Dojun Kim,b
and Timothy J. Andersonb
a
Department of Chemistry, University of Florida, Gainesville, Florida 32611 USA
b
Department of Chemical Engineering, University of Florida, Gainesville, Florida
32611 USA
A chemistry-based approach to designing precursors for the
deposition of inorganic films requires consideration of the physical
properties of the precursor compound (e.g., volatility for transport
in the reactor) and its probable decomposition pathways, both in
the gas phase and on the surface during growth. We have been
using Aerosol-Assisted Chemical Vapor Deposition of tungsten
carbonitride (WNxCy) films from tungsten imido complexes and
tungsten hydrazido complexes as a model system to investigate the
relationship between data obtained from conventional
organometallic mechanistic study of the precursors and the
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