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Available online at www.sciencedirect.com Sensors and Actuators A 141 (2008) 282287
 

Summary: Available online at www.sciencedirect.com
Sensors and Actuators A 141 (2008) 282287
Effect of seed layer on the sensitivity of exchange
biased planar Hall sensor
K.M. Chuia, A.O. Adeyeyea,, Mo-Huang Lib
a Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
National University of Singapore, Singapore 117576, Singapore
b Institute of Bioengineering and Nanotechnology, 31 Biopolis Way, The Nanos, Singapore 138669, Singapore
Received 3 July 2007; received in revised form 2 August 2007; accepted 7 August 2007
Available online 17 August 2007
Abstract
We investigate systematically the effects of seed layer thickness on the sensitivity of exchange biased planar Hall sensors. The sensors consist
of Ni80Fe20 (ts)/Fe50Mn50 (20 nm)/Ni80Fe20 (20 nm) trilayers deposited on silicon substrates by sputtering, with ts varied from 0 nm to 50 nm. The
sensors are linear near zero-field as a result of the pinning field from the Fe50Mn50 layer. We observed that the sensitivity and range of linearity of
the sensors are strongly dependent on the Ni80Fe20 seed layer thickness. The sensitivity of the sensors were also calculated by taking into account
the shunting effects of the various metal layers, and the values obtained agree well with the experimental values.
2007 Elsevier B.V. All rights reserved.
Keywords: Exchange bias; Planar Hall effect; Sensor; Seed layer
1. Introduction
Magnetic field detection sensors have applications in a

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science