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Experimental realization of a silicon spin field-effect transistor Biqin Huanga
 

Summary: Experimental realization of a silicon spin field-effect transistor
Biqin Huanga
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware 19716
Douwe J. Monsma
Cambridge NanoTech, Inc., Cambridge, Massachusetts 02139
Ian Appelbaum
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware 19716
Received 29 May 2007; accepted 20 July 2007; published online 13 August 2007
A longitudinal electric field is used to control the transit time through an undoped silicon vertical
channel of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied
voltage determines the final spin direction at the spin detector and hence the output collector current,
this comprises a spin field-effect transistor. An improved hot-electron spin injector providing
115% magnetocurrent, corresponding to at least 37% electron current spin polarization after
transport through 10 m undoped single-crystal silicon, is used for maximum current
modulation. 2007 American Institute of Physics. DOI: 10.1063/1.2770656
The spin field effect transistor spinFET proposed by
Datta and Das1
has stimulated much research in spin
precession-controlled electronic semiconductor devices.25
Because silicon Si has a very long intrinsic electron spin

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science