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Summary: INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER
J. Phys.: Condens. Matter 13 (2001) 89238929 PII: S0953-8984(01)24501-9
Carbon--an alternative acceptor for cubic GaN
D J As and U K¨ohler
Universit¨at Paderborn, FB-6 Physik, D-33095 Paderborn, Germany
Received 2 May 2001
Published 20 September 2001
Online at stacks.iop.org/JPhysCM/13/8923
Abstract
Carbon doping of cubic GaN epilayers has been performed by rf-
plasma-assisted molecular beam epitaxy using an e-beam evaporation
source. Hall-effect measurements at room temperature and low-temperature
photoluminescence were used to characterize the electrical and optical
properties. Room-temperature Hall-effect measurements revealed a maximum
hole concentration of the c-GaN epilayer of 6 × 1017
cm-3
with a mobility
of 200 cm2
V-1
s-1
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