Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 13 (2001) 89238929 PII: S0953-8984(01)24501-9
 

Summary: INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER
J. Phys.: Condens. Matter 13 (2001) 8923≠8929 PII: S0953-8984(01)24501-9
Carbon--an alternative acceptor for cubic GaN
D J As and U K®ohler
Universit®at Paderborn, FB-6 Physik, D-33095 Paderborn, Germany
Received 2 May 2001
Published 20 September 2001
Online at stacks.iop.org/JPhysCM/13/8923
Abstract
Carbon doping of cubic GaN epilayers has been performed by rf-
plasma-assisted molecular beam epitaxy using an e-beam evaporation
source. Hall-effect measurements at room temperature and low-temperature
photoluminescence were used to characterize the electrical and optical
properties. Room-temperature Hall-effect measurements revealed a maximum
hole concentration of the c-GaN epilayer of 6 ◊ 1017
cm-3
with a mobility
of 200 cm2
V-1
s-1

  

Source: As, Donat Josef - Department Physik, Universitšt Paderborn

 

Collections: Materials Science; Physics