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Nanometer-scale material contrast imaging with a near-field microwave Atif Imtiaza
 

Summary: Nanometer-scale material contrast imaging with a near-field microwave
microscope
Atif Imtiaza
and Steven M. Anlage
Center for Superconductivity Research, Department of Physics, University of Maryland, College Park,
Maryland 20742-4111
John D. Barry and John Melngailis
Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland
20742-3511
Received 3 January 2007; accepted 26 February 2007; published online 3 April 2007
The authors report topography-free material contrast imaging on a nanofabricated boron-doped
silicon sample measured with a near-field scanning microwave microscope over a broad frequency
range. The boron doping was performed using the focus ion beam technique on a silicon wafer with
nominal resistivity of 61 cm. A topography-free doped region varies in sheet resistance from
1000 / to about 400 k / within a lateral distance of 4 m. The qualitative spatial resolution
in sheet resistance imaging contrast is no worse than 100 nm as estimated from the frequency shift
signal. 2007 American Institute of Physics. DOI: 10.1063/1.2719164
As complementary metal-oxide-semiconductor technol-
ogy reaches the sub-45- nm node, and operating frequencies
of integrated circuits reach into the microwave regime, there

  

Source: Anlage, Steven - Center for Superconductivity Research & Department of Physics, University of Maryland at College Park

 

Collections: Materials Science