| | |
Summary: Ordered arrays of metal nanoparticles in
semiconductor hosts
NSF-DMR05-20415IRG-4
Novel arrays of metal nanoparticles in semiconductors
have recently been prepared by codeposition of erbium
atoms simultaneously with semiconductor atoms to
form erbium arsenide particles within semiconductor
films. The nanoparticles each containing approximately
100 atoms, are metallic in nature, and preferentially
locate in select crystal planes with the average spacing
between nanoparticles of about ten atoms or four
nanometers. The control of materials composition and
architecture at such a small scale significantly expands
the capabilities of future electronic devices and these
new, nanocomposite materials are finding applications
in electrical contacts, energy, ultrafast electronics and
basic nanoscale science.
Novel arrays of metal nanoparticles in semiconductors
have recently been prepared by codeposition of erbium
atoms simultaneously with semiconductor atoms to
|
