Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Electronic properties of half metallic Fe3O4 films S. Jain and A. O. Adeyeyea
 

Summary: Electronic properties of half metallic Fe3O4 films
S. Jain and A. O. Adeyeyea
Department of Electrical and Computer Engineering, Information Storage Materials Laboratory, National
University of Singapore, Singapore 117576, Singapore
C. B. Boothroyd
Institute of Materials Research and Engineering, 3 Research Link, Singapore
Received 1 November 2004; accepted 17 February 2005; published online 22 April 2005
A systematic study of the electronic properties of Fe3O4 films grown directly on Si 001 substrates
and on Ta, Ti, and SiO2 buffer layers using electron beam deposition is presented. The effect of the
buffer layer on the Verwey transition temperature and on the current­voltage characteristics of
Fe3O4 has been studied in detail. We observed that for a fixed Fe3O4 film thickness, the Verwey
transition temperature is strongly dependent on the buffer layer materials. Transmission electron
microscopy reveals that the growth mechanism of the Fe3O4 films is strongly dependent on the type
of buffer layer used. The contribution of long range and short range charge ordering below the
transition temperature has also been investigated. We observed an insulator-like gap structure in the
density of states below the transition temperature which gradually disappears with increasing
temperature. © 2005 American Institute of Physics. DOI: 10.1063/1.1889247
INTRODUCTION
Half metallic ferromagnetic materials, characterized by
100% spin polarization and having only one spin-subband at

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science