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Chemical vapor deposition of WNxCy using the tungsten piperidylhydrazido complex Cl4,,CH3CN...W,,N-pip...: Deposition, characterization, and
 

Summary: Chemical vapor deposition of WNxCy using the tungsten piperidylhydrazido
complex Cl4,,CH3CN...W,,N-pip...: Deposition, characterization, and
diffusion barrier evaluation
Dojun Kim, Oh Hyun Kim, and Tim Andersona
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611-6005
Jrgen Koller and Lisa McElwee-Whiteb
Department of Chemistry, University of Florida, Gainesville, Florida 32611-7200
Lii-Cherng Leu, Joseph M. Tsai, and David P. Norton
Department of Material Science and Engineering, University of Florida, Gainesville, Florida 32611-6400
Received 7 October 2008; accepted 2 March 2009; published 30 June 2009
The tungsten piperidylhydrazido complex Cl4 CH3CN W N-pip 1 was used for film growth of
tungsten carbonitride WNxCy by metal-organic chemical vapor deposition CVD in the absence
and presence of ammonia NH3 in H2 carrier. The microstructure of films deposited with NH3 was
x-ray amorphous between 300 and 450 C. The chemical composition of films deposited with NH3
exhibited increased N levels and decreased C levels over the entire deposition temperature range
300700 C as compared to films deposited without NH3. As determined by x-ray photoelectron
spectroscopy, W is primarily bonded to N and C for films deposited at 400 C, but at lower
deposition temperature the binding energy of the WO bond becomes more evident. The growth
rates of films deposited with NH3 varied from 0.6 /min at 300 C to 4.2 /min at 600 C. Over
600 C, the growth rate decreased when using NH3 presumably due to parasitic gas phase reactions

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science