Summary: Chemical vapor deposition of WNxCy using the tungsten piperidylhydrazido
complex Cl4,,CH3CN...W,,N-pip...: Deposition, characterization, and
diffusion barrier evaluation
Dojun Kim, Oh Hyun Kim, and Tim Andersona
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611-6005
Jürgen Koller and Lisa McElwee-Whiteb
Department of Chemistry, University of Florida, Gainesville, Florida 32611-7200
Lii-Cherng Leu, Joseph M. Tsai, and David P. Norton
Department of Material Science and Engineering, University of Florida, Gainesville, Florida 32611-6400
Received 7 October 2008; accepted 2 March 2009; published 30 June 2009
The tungsten piperidylhydrazido complex Cl4 CH3CN W N-pip 1 was used for film growth of
tungsten carbonitride WNxCy by metal-organic chemical vapor deposition CVD in the absence
and presence of ammonia NH3 in H2 carrier. The microstructure of films deposited with NH3 was
x-ray amorphous between 300 and 450 °C. The chemical composition of films deposited with NH3
exhibited increased N levels and decreased C levels over the entire deposition temperature range
300­700 °C as compared to films deposited without NH3. As determined by x-ray photoelectron
spectroscopy, W is primarily bonded to N and C for films deposited at 400 °C, but at lower
deposition temperature the binding energy of the W­O bond becomes more evident. The growth
rates of films deposited with NH3 varied from 0.6 Å/min at 300 °C to 4.2 Å/min at 600 °C. Over
600 °C, the growth rate decreased when using NH3 presumably due to parasitic gas phase reactions

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

Collections: Materials Science