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Growth of InGaN HBTs by MOCVD THEODORE CHUNG,1,5
 

Summary: Growth of InGaN HBTs by MOCVD
THEODORE CHUNG,1,5
JAE LIMB,1
JAE-HYUN RYOU,1
WONSEOK LEE,1
PENG LI,1
DONGWON YOO,1
XUE-BING ZHANG,1
SHYH-CHIANG SHEN,1
RUSSELL D. DUPUIS,1
DAVID KEOGH,2
PETER ASBECK,2
BEN CHUKUNG,3
MILTON FENG,3
DIMITRI ZAKHAROV,4
and ZUSANNE LILIENTHAL-WEBER4
1.--Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive,
Atlanta GA 30332-0250. 2.--Electrical and Computer Engineering, University of California, San
Diego, 9500 Gilman Drive, La Jolla, CA 92093-0407. 3.--Center for Micro and Nanoelectronics,
University of Illinois at Urbana-Champaign, 208 N. Wright Street, Urbana IL 61801. 4.--Lawrence

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering