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Ultrafast All-optical Switches Based on Intersubband Transitions in GaN/AlN Multiple Quantum Wells for Tb/s Operation
 

Summary: Ultrafast All-optical Switches Based on Intersubband Transitions in GaN/AlN Multiple
Quantum Wells for Tb/s Operation
Jahan M. Dawlaty, Farhan Rana and William J. Schaff
Department of Electrical and Computer Engineering, Philips Hall, Cornell University, Ithaca,
NY 14853, U.S.A
(Award for Best Paper)
Proceedings of the Fall Meeting of the Materials Research Society, 2004
ABSTRACT
Theoretical and experimental results on ultra-fast all-optical switches based on intersubband
transitions for Tb/s operation are presented. Designs for engineering intersubband transitions
(ISBT) in GaN/AlN quantum wells near communication wavelengths (~1.55 Ám) and for
realizing all-optical switches requiring small pulse energies are discussed. Optimized designs
show all-optical switching at Tb/s data rates with pulse energies as small as 200 fJ. Experimental
realization of narrow line-width ISBT in GaN/AlN superlattices is also demonstrated.
INTRODUCTION
Ultrafast all-optical switches are expected to play an important role in high capacity optical time
division multiplexed (TDM) networks. As the demand for bandwidth grows, optical networks are
expected to operate at data rates approaching 1 Tb/s. Also, each channel in wavelength division
multiplexed (WDM) optical network is expected to operate at data rates exceeding 100 Gb/s. At
such high data rates it is desirable to perform switching entirely in the optical domain. In order to

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering