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mja128.pdf 1 ON KINETICALLY VS. ENERGETICALLY DRIVEN GROWTH INSTABILITIES
 

Summary: mja128.pdf 1
ON KINETICALLY VS. ENERGETICALLY DRIVEN GROWTH INSTABILITIES
IN SOLID AND VAPOR PHASE EPITAXY
MICHAEL J. AZIZ
Division of Engineering and Applied Sciences, Harvard University, Cambridge MA 02138
ABSTRACT
A stress-induced kinetically-driven morphological instability is of general applicability to
driven systems. The effect of stress on the reaction mobility for incorporation into the growing
solid couples to stress variations along a perturbed planar growth front, resulting in amplification
or decay of the perturbation depending on the sign of the stress. Experimentally we studied a
model system in which stress is applied externally to a chemically pure substance, permitting us
to isolate the effect of strain from any possible effects of composition, and found that the new
kinetically-driven effect dominates the behavior for solid phase epitaxial growth (SPEG) of
Si(001). A linear stability analysis of a sinusoidally perturbed planar growth front, incorporating
both the kinetically and the energetically driven effects, has been performed. Stability maps are
developed, indicating parameter ranges under which the morphological evolution is dominated
by the energetically-driven instability, the kinetically-driven instability, and the kinetically-
driven stabilization. Numerical values of the key dimensionless parameters for SPEG and for
SiGe/Si(001) Molecular Beam Epitaxy (MBE) are very similar in cases where they are known,
indicating that the kinetically-driven effect may be important in determining morphological

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science