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SOI-BASED HF AND VHF SINGLE-CRYSTAL SILICON RESONATORS WITH SUB-100 NANOMETER VERTICAL CAPACITIVE GAPS
 

Summary: SOI-BASED HF AND VHF SINGLE-CRYSTAL SILICON RESONATORS WITH
SUB-100 NANOMETER VERTICAL CAPACITIVE GAPS
Siavash Pourkamali, and Farrokh Ayazi
School of Electrical and Computer Engineering
Georgia Institute of Technology, Atlanta, GA 30332-0250
Email: siavash@ece.gatech.edu; Tel: (404) 385-4306; Fax: (404) 894-5028
ABSTRACT
This paper reports on the fabrication and
characterization of single-crystal silicon (SCS) capacitive
resonators with operating frequencies in the HF (3-30MHz)
and VHF (30-300MHz) range. In-plane ultra-stiff SCS
resonators with polysilicon electrodes and self-aligned 90nm
vertical capacitive gaps have been fabricated on SOI
substrates using a HARPSS-like fabrication process. High
frequency side-supported flexural disk resonators and
clamped-clamped beam resonators have been implemented
and tested. A 3Ám thick, 30Ám in diameter SCS disk
resonator exhibited a quality factor of 40,000 in vacuum at
148MHz. When operated in atmosphere, the same device
demonstrated a Q of 8,000.

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering