Summary: Contactless electroreflectance study of Fermi-level pinning at the surface
of cubic GaN
R. Kudrawiec,1,a
E. Tschumak,2
J. Misiewicz,1
and D. J. As2
1
Institute of Physics, Wroclaw University of Technology, Wybrzee Wyspiaskiego 27,
50-370 Wroclaw, Poland
2
Department Physik, Universität Paderborn, Warburger Strasse 100, D-33095 Paderborn, Germany
Received 23 April 2010; accepted 28 May 2010; published online 18 June 2010
Van Hoof structures C. Van Hoof, K. Deneffe, J. De Boeck, D. J. Arent, and G. Borghs, Appl. Phys.
Lett. 54, 608 1989 with various thicknesses of the undoped layer, for which a homogeneous
built-in electric field is expected, were grown for studies of the Fermi-level pinning at the surface
of cubic GaN. The built-in electric field in the undoped GaN layer was determined from contactless
electroreflectance measurements of Franz­Keldysh oscillations. A good agreement between the
determined and calculated electric field has been found for the Fermi-level located 0.4 eV below
the conduction band at the surface. © 2010 American Institute of Physics. doi:10.1063/1.3455907
The recent progress in the growth of cubic GaN bulk

Source: As, Donat Josef - Department Physik, Universität Paderborn

Collections: Materials Science; Physics