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High pressures and the Kondo gap in Ce3Bi4Pt3 J. C. Cooley and M. C. Aronson

Summary: High pressures and the Kondo gap in Ce3Bi4Pt3
J. C. Cooley and M. C. Aronson
Department of Physics, The University of Michigan, Ann Arbor, Michigan 48109-1120
P. C. Canfield
Ames Laboratory, Iowa State University, Ames, Iowa 50011
Received 20 September 1996
We have measured the electrical resistivity (T) of single crystals of Ce3Bi4Pt3 for temperatures from 1.2 to
300 K, and pressures from 1 bar to 145 kbar. The transport is dominated at high temperatures by excitations
across a small activation gap , which increases rapidly with pressure. The low-temperature transport involves
variable range hopping among extrinsic states in the gap. The spatial extent of the in-gap states reflects
coupling to conduction-electron states, and is strongly modified as pressure enhances . Despite the strong
pressure dependence of , a direct correspondence between single-ion energetics and the measured gap is
maintained, and the role of valence fluctuations is minimal even at the highest pressures.
S0163-1829 97 00412-8
The rare-earth and actinide intermetallic ``heavy-
fermion'' compounds are a continuing source of novel and
diverse ground states, whose properties are determined not
only by the energetics of the spin-compensated moments, but
also by the consequences of lattice periodicity.1
The Kondo


Source: Aronson, Meigan - Department of Physics and Astronomy, SUNY at Stony Brook


Collections: Materials Science; Physics