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Piezoelectric and dielectric tunabilities of ultra-thin ferroelectric heterostructures
 

Summary: Piezoelectric and dielectric tunabilities of ultra-thin
ferroelectric heterostructures
S. Zhong and S.P. Alpaya)
Department of Materials Science and Engineering and Institute of Materials Science, University of
Connecticut, Storrs, Connecticut 06269
V. Nagarajan
School of Materials Science and Engineering, University of New South Wales,
Sydney NSW 2052, Australia
(Received 18 November 2005; accepted 22 March 2006)
The scaling of the piezoelectric and dielectric constants with film thickness in
ultra-thin ferroelectric heterostructures is investigated. Epitaxial (001) PbZr0.2Ti0.8O3
films ranging in thickness from 5 nm to 30 nm with top and bottom SrRuO3 electrodes
were grown onto (001) SrTiO3 substrates via pulsed laser deposition. Piezoelectric
and dielectric measurements were performed using an atomic force microscope. The
remnant value of the out of plane piezoresponse (d33) decreases from 60 pm/V for
the 30 nm film to just 7 pm/V for the 5 nm film. This systematic decline in d33 is
accompanied by a corresponding increase in the coercive field. The d33 loops show
a systematic increase in tilt towards the applied field axis as function of reducing
thickness coupled with a decrease in piezoelectric tunability. The small-signal relative
dielectric response in the direction normal to the film-substrate interface decreases

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science