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NONHYDROSTATIC STRESS EFFECTS ON BORON DIFFUSION IN SI MICHAEL J. AZIZ
 

Summary: 1
NONHYDROSTATIC STRESS EFFECTS ON BORON DIFFUSION IN SI
MICHAEL J. AZIZ
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
ABSTRACT
The thermodynamics of diffusion under hydrostatic pressure and nonhydrostatic stress is
developed for single crystals free of extended defects and is applied to the case of boron diffusion
in silicon. The thermodynamic relationships obtained permit the direct comparison of hydrostatic
and biaxial stress experiments and of atomistic calculations under hydrostatic stress. Assuming
various values for the anisotropy in the migration strain, a currently unknown parameter,
comparison is made between various measurements under hydrostatic pressure and nonhydrostatic
stress, and various atomistic calculations of the volumetrics of B and Si diffusion by an interstitial-
based mechanism. An independent determination of the anisotropy of the migration strain would
permit a parameter-free determination of the predominant diffusion mechanism and would permit
the prediction of the ratio of the diffusivity normal to the free surface to the diffusivity parallel to
the surface for biaxially strained films. Procedures for measuring and calculating the anisotropy in
the migration strain are described.
INTRODUCTION
Because understanding and controlling diffusion related phenomena become increasingly
important as semiconductor device dimensions decrease, diffusion in semiconductors has been

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science