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IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 8, AUGUST 2004 529 Ge-Blade Damascene Process for Post-CMOS
 

Summary: IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 8, AUGUST 2004 529
Ge-Blade Damascene Process for Post-CMOS
Integration of Nano-Mechanical Resonators
Hideki Takeuchi, Member, IEEE, Emmanuel Quvy, Member, IEEE, Sunil A. Bhave, Student Member, IEEE,
Tsu-Jae King, Senior Member, IEEE, and Roger T. Howe, Fellow, IEEE
Abstract--A novel process is demonstrated for fabrication of
high-frequency mechanical resonators applicable for on-chip
radio-frequency communication. This Ge-blade damascene
process (GBDP) provides ultranarrow lateral gaps using litho-
graphically defined sacrificial Ge blades (high-aspect-ratio Ge
features). The use of Ge as the sacrificial material eliminates the
need for a hydrogen fluoride etch process to release the mechanical
structures, and, hence, simplifies the integration of micro-electro-
mechanical (MEMS) with CMOS circuitry. Polycrystalline
silicon-germanium (poly-SiGe) is used as the structural material
in order to keep the thermal budget low (maximum temperature
425 C), so as to be compatible with CMOS metallization stacks.
A 24-MHz double-ended tuning fork resonator was successfully
fabricated using the GBDP.
Index Terms--Micro-electromechanical (MEMS), resonator, sil-

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering