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Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra
 

Summary: Conduction band states of transition metal (TM) high-k
gate dielectrics as determined from X-ray absorption spectra
G. Lucovsky a,b,*, J.G. Hong b
, C.C. Fulton b
, N.A. Stoute a
, Y. Zou a
,
R.J. Nemanich a
, D.E. Aspnes a
, H. Ade a
, D.G. Schlom c
a
Department of Physics, North Carolina State University, Raleigh, NC 27695, USA
b
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA
c
Department of Materials Science, Pennsylvania State University, State College, PA, USA
Abstract
This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics includ-
ing TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as

  

Source: Ade, Harald W.- Department of Physics, North Carolina State University

 

Collections: Physics