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Summary: Journal of Crystal Growth 274 (2005) 3846
Influence of polarity on GaN thermal stability
M.A. Mastroa,Ã, O.M. Kryliouka
, T.J. Andersona
, A. Davydovb
, A. Shapirob
a
Department of Chemical Engineering, University of Florida, Gainesville, FL, USA
b
Metallurgy Division, NIST, Gaithersburg, MD, USA
Received 24 June 2004; accepted 23 September 2004
Communicated by C.R. Abernathy
Available online 11 November 2004
Abstract
A comparative study of the stability of Ga- and N-polar GaN films was made in different gas ambients (N2, H2, NH3,
HCl). The Ga-polar films were observed to undergo a dissociative sublimation, while the N-polar films formed
condensed Ga in addition to the gaseous species. The difference in polarity affects the morphology and bonding on the
surface, and thus, stability of the atoms bonded to the surface.
r 2004 Elsevier B.V. All rights reserved.
PACS: 81.30.Fb; 81.10.Aj; 64.70.Dv; 82.30.Lp
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