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Summary: Experimental I±V characteristics of AlGaAs/GaAs and
GaInP/GaAs (D)HBTs with thin bases
Y.M. Hsina,
*, P.M. Asbeckb
a
Department of Electrical Engineering, National Central University, Chung-Li, 320, Taiwan
b
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407, USA
Received 25 January 1999; received in revised form 20 October 1999
Abstract
N±p±n AlGaAs/GaAs and GaInP/GaAs (double) heterojunction bipolar transistors with thin base widths down
to 200 AÊ have been fabricated, and their collector and base current±voltage characteristics have been studied. The
experimental results show that the surface recombination current and the base bulk recombination current are lower
in 200 AÊ base AlGaAs/GaAs HBTs than in comparable devices with 500 AÊ base width. The experiment also showed
that the surface recombination currents and the sum of other base recombination currents (the base bulk
recombination current, the base-emitter junction space charge recombination current, and the base-to-emitter back-
injected current) are signi®cantly lower in GaInP/GaAs (D)HBTs than that in comparable AlGaAs/GaAs HBTs.
For the thin base GaInP/GaAs (D)HBTs, the current gain measurements with dierent emitter sizes demonstrates
high current gain, low emitter edge recombination and negligible emitter-size eect. 7 2000 Elsevier Science Ltd.
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