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Effect of spacer layer thickness on the magnetic and magnetotransport properties of Fe3O4/Cu/Ni80Fe20 spin valve structures
 

Summary: Effect of spacer layer thickness on the magnetic and magnetotransport properties
of Fe3O4/Cu/Ni80Fe20 spin valve structures
D. Tripathy and A. O. Adeyeye*
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
National University of Singapore, Singapore 117576
S. Shannigrahi
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
Received 20 June 2006; revised manuscript received 24 September 2006; published 16 January 2007
We present a systematic and detailed study of the magnetization reversal process and magnetotransport
properties of Fe3O4/Cu tCu /Ni80Fe20 spin valve structures. A drastic change was observed in both the
magnetic and transport properties as the thickness of the Cu spacer layer tCu was varied in the range 2 nm
tCu 30 nm. For tCu=2 nm, the transport properties are mainly due to anisotropic magnetoresistance effects
because of strong exchange coupling between the Ni80Fe20 and Fe3O4 layers. For tCu 5 nm, however, the
transport properties are dominated by positive giant magnetoresistance GMR effects due to separate magne-
tization switching of the two magnetic layers. The GMR ratio decreases with increasing spacer layer thickness
due to enhanced current shunting and scattering effects. We also observed that the GMR ratio has strong
temperature dependence and decreases with increasing temperature due to spin flip scattering and electron-
magnon interactions.
DOI: 10.1103/PhysRevB.75.012403 PACS number s : 75.70. i, 75.70.Cn, 75.60.Jk
The magnetic and transport properties of ferromagnetic

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science