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Summary: PN-DIODE TRANSDUCED 3.7-GHZ SILICON RESONATOR
Eugene Hwang and Sunil A. Bhave
Cornell University, Ithaca, NY, USA
ABSTRACT
We present in this paper the design and fabrication of
a homogeneous silicon micromechanical resonator
actuated using forces acting on the immobile charge
in the depletion region of a symmetrically doped pn-
diode. The proposed resonator combines the high
quality factor (Q) of air-gap transduced resonators
with the frequency scaling benefits of internal
dielectrically transduced resonators. Using this
transduction method, we demonstrate a thickness
longitudinal mode micromechanical resonator with Q
~ 18,000 at a resonant frequency of 3.72 GHz,
yielding an f·Q product of 6.69 x 1013
, which is close
to the intrinsic f·Q product of 1014
for (100)-Si.
INTRODUCTION
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