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Activation volume for antimony diffusion in silicon and implications for strained films
 

Summary: Activation volume for antimony diffusion in silicon and implications
for strained films
Yuechao Zhao and Michael J. Aziza)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Hans-J. Gossmann
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
Salman Mitha
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, California 94063
David Schiferl
Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Received 25 February 1999; accepted for publication 22 June 1999
The diffusivity of Sb in Si is retarded by pressure, characterized at 860 C by an activation volume
of V* 0.07 0.02 times the Si atomic volume. V* is close to values inferred from atomistic
calculations for a vacancy mechanism. Our results for hydrostatic pressure are used to predict the
effect of biaxial strain on Sb diffusion. The prediction matches measured behavior for Sb diffusion
in biaxially strained Si and SiGe films. This work lends additional support to the predominance of
the vacancy mechanism for Sb diffusion and demonstrates the first steps in the development of a
capability for predicting the effect of nonhydrostatic stress on diffusion. 1999 American
Institute of Physics. S0003-6951 99 03233-7
Because understanding and controlling diffusion-related

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science