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516 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 19, NO. 3, JUNE 2010 Micromechanical IBARs: Modeling and
 

Summary: 516 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 19, NO. 3, JUNE 2010
Micromechanical IBARs: Modeling and
Process Compensation
Gavin K. Ho, Member, IEEE, John Kangchun Perng, and Farrokh Ayazi, Senior Member, IEEE
Abstract--Manufacturability is a major challenge before wide-
spread adoption of micromechanical resonators as frequency ref-
erences. In this paper, the limits of frequency accuracy for a
silicon resonator are investigated. The factors to these limits,
including starting materials and process variations, are investi-
gated. Design for manufacturing utilizing process compensation
(PC) is presented. The I-shaped bulk acoustic resonator (IBAR) is
considered since it has features that enable PC. A lumped-element
model for the IBAR is developed. Assuming that variations in
resonator geometry are locally systematic, the effect of process
bias on resonator frequency is modeled. A procedure to obtain low
sensitivity to process variations is explained. Process bias variation
(i.e., skew) on a 10-MHz design is replicated with electron beam
lithography. PC of a micromechanical resonator, confirmed with
experimental data, is demonstrated for the first time. From the
observations, strategies for obtaining absolute single-digit ppm

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering