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448 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 A Theory of High-Frequency Distortion
 

Summary: 448 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003
A Theory of High-Frequency Distortion
in Bipolar Transistors
Mani Vaidyanathan, Member, IEEE, Masaya Iwamoto, Student Member, IEEE, Lawrence E. Larson, Fellow, IEEE,
Prasad S. Gudem, Member, IEEE, and Peter M. Asbeck, Fellow, IEEE
Abstract--High-frequency distortion in bipolar transistors
is examined by using the charge-control approach of Poon and
Narayanan to connect the device's distortion behavior to its
"loaded" unity­current­gain frequency (^ ). The resulting
expressions for the distortion reveal considerable information
on its frequency and bias dependence. Points on the ^ versus
collector current curve yielding optimum distortion performance
are identified and interpreted in terms of current cancellation.
Both second- and third-order distortion are considered, and the
results are validated by both simulation and experiment.
Index Terms--Current cancellation, harmonic distortion,
heterojunction and homojunction bipolar transistors,
high-frequency distortion, intermodulation distortion, linearity,
nonlinear distortion, unity­current­gain frequency, Volterra
series.

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego
Larson, Larry - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering