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Activation volume for arsenic diffusion in germanium Salman Mithaa)

Summary: Activation volume for arsenic diffusion in germanium
Salman Mithaa)
and Michael J. Azizb)
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
David Schiferl
Los Alamos National Laboratory, Los Alamos, New Mexico 87545
David B. Poker
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 38731
Received 3 May 1996; accepted for publication 10 June 1996
We have measured the effect of pressure on As diffusion in Ge. Diffusion anneals on ion-implanted
samples were carried out in a high-temperature diamond anvil cell using fluid argon as a clean,
hydrostatic pressure medium. At 575 C over the pressure range 0.14 GPa, pressure slightly
enhances the diffusivity, characterized by an activation volume of 1.7 1.4 cm3
/mole or
0.12 0.10 times the atomic volume. The results call into question the prevailing view that
diffusion of groups III, IV, and V elements are mediated entirely by vacancies. If diffusion of As is
mediated entirely by vacancies then either the vacancy formation volume must be unexpectedly low
or the energy of vacancy migration must be unexpectedly high. 1996 American Institute of
Physics. S0003-6951 96 02132-8
In the elemental solids the diffusion mechanism is an


Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University


Collections: Physics; Materials Science