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Summary: Carrier-phonon interaction in small cross-sectional silicon nanowires
A. K. Buin,1
A. Verma,2
and M. P. Anantram1
1
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo,
Ontario N2L 3G1, Canada
2
Department of Electrical Engineering and Computer Science, Texas A&M University-Kingsville,
Kingsville, Texas 78363, USA
Received 18 June 2008; accepted 24 June 2008; published online 10 September 2008
Using first-order perturbation theory and deformation potential approximation, the interaction of
electrons and holes with acoustic and optical phonons is investigated in silicon nanowires SiNWs
with different diameters and crystallographic axis orientations. The electronic band structures for
110 and 100 SiNWs are obtained from a sp3
d5
s tight-binding scheme, while a continuum model
is assumed for phonon dispersion. The influence of confined and bulk phonons on carrier transport
is investigated. © 2008 American Institute of Physics. DOI: 10.1063/1.2974088
I. INTRODUCTION
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