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Summary: Dipolar coupling in closely packed pseudo-spin-valve nanowire arrays
S. Goolaup and A. O. Adeyeyea
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore
N. Singh
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II,
Singapore 117685, Singapore
Received 21 June 2006; accepted 30 August 2006; published online 1 December 2006
A systematic study of the effects of lateral magnetostatic coupling of closely packed
pseudo-spin-valve Ni80Fe20 10 nm /Cu tCu /Ni80Fe20 80 nm nanowire arrays with varied Cu film
thicknesses is investigated. Nanowire arrays with a width of 185 nm and edge-to-edge spacings of
35 and 185 nm, respectively, were fabricated using deep ultraviolet lithography at 248 nm exposing
wavelength. When the Cu spacer layer thickness is comparable to the edge-to-edge spacing of the
closely packed wires, marked changes in the magnetization reversal process are observed for the
nanowire array with edge-to-edge spacing of 35 nm, due to the competition between the dipolar
coupling between the neighboring nanowires and interlayer magnetostatic coupling between the
thick and thin Ni80Fe20 layers. © 2006 American Institute of Physics. DOI: 10.1063/1.2374671
I. INTRODUCTION
The advancement in lithographic and other controlled
nanofabrication techniques has enabled the exploration of
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