Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Dipolar coupling in closely packed pseudo-spin-valve nanowire arrays S. Goolaup and A. O. Adeyeyea
 

Summary: Dipolar coupling in closely packed pseudo-spin-valve nanowire arrays
S. Goolaup and A. O. Adeyeyea
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore
N. Singh
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II,
Singapore 117685, Singapore
Received 21 June 2006; accepted 30 August 2006; published online 1 December 2006
A systematic study of the effects of lateral magnetostatic coupling of closely packed
pseudo-spin-valve Ni80Fe20 10 nm /Cu tCu /Ni80Fe20 80 nm nanowire arrays with varied Cu film
thicknesses is investigated. Nanowire arrays with a width of 185 nm and edge-to-edge spacings of
35 and 185 nm, respectively, were fabricated using deep ultraviolet lithography at 248 nm exposing
wavelength. When the Cu spacer layer thickness is comparable to the edge-to-edge spacing of the
closely packed wires, marked changes in the magnetization reversal process are observed for the
nanowire array with edge-to-edge spacing of 35 nm, due to the competition between the dipolar
coupling between the neighboring nanowires and interlayer magnetostatic coupling between the
thick and thin Ni80Fe20 layers. 2006 American Institute of Physics. DOI: 10.1063/1.2374671
I. INTRODUCTION
The advancement in lithographic and other controlled
nanofabrication techniques has enabled the exploration of

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science