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p-Type Doping of Cubic GaN by Carbon ), U. Kohler, M. Lubbers, J. Mimkes, and K. Lischka
 

Summary: p-Type Doping of Cubic GaN by Carbon
D. J. As1
), U. Ko®hler, M. Lu®bbers, J. Mimkes, and K. Lischka
FB-6 Physik, Universita®t Paderborn, Warburger Str. 100, D-33095 Paderborn, Germany
(Received June 21, 2001; accepted July 12, 2001)
Subject classification: 68.55.Ln; 71.55.Eq; 78.55.Cr; 73.61.Ey; 81.15.Hi; S7.14
Successful p-type doping of cubic GaN epilayers by carbon using an e-beam evaporation source is
reported. At room temperature Hall-effect measurements of the C-doped cubic GaN epilayer gave
hole concentrations and hole mobilities as high as 6 ¬ 1017
cm≠≠3
and 200 cm2
/Vs, respectively. The
thermal activation energy of the C-acceptor is (215 ∆ 10) meV. Low temperature photolumines-
cence spectra show a new line appearing at 3.08 eV. The emission energy increases with increasing
e-beam evaporation power. This 3.08 eV line is attributed to a C related donor acceptor (D0
A0
)
transition.
Introduction For the development of electronic and optoelectronic devices based on
group III-nitrides controlled p-type doping is crucial. Up to now Mg has been the com-

  

Source: As, Donat Josef - Department Physik, Universitšt Paderborn

 

Collections: Materials Science; Physics