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Platform for JFET-based Sensing of RF MEMS Resonators in CMOS Technology Eugene Hwang1
 

Summary: Platform for JFET-based Sensing of RF MEMS Resonators in CMOS Technology
Eugene Hwang1
, Andrew Driscoll2
, and Sunil A. Bhave1
1
OxideMEMS Lab, Cornell University, Ithaca, NY, USA
2
United States Army
Abstract
This paper presents an RF MEMS resonator with embedded
junction field effect transistor (JFET) for efficient electrical
detection of the high quality factor acoustic resonance. A
homogenous single-crystal silicon resonator is excited in its
fundamental thickness extensional resonant mode at 1.61
GHz with a quality factor of 25,900. This device can be fully
integrated into a typical SOI CMOS technology with minimal
modifications to the existing front-end process. Furthermore,
it achieves an acoustic transconductance of 171 S at a bias
current of 143 A, approaching a practical range for
monolithic, low-power RF systems.

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering