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Summary: Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+
implantation followed by pulsed laser melting
Taeseok Kim,a
Michael J. Aziz, and Venkatesh Narayanamurti
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA
Received 16 July 2008; accepted 26 August 2008; published online 12 September 2008
We present measurements on two dimensionally patterned GaNxAs1-x dots fabricated in a GaAs
matrix using ion implantation followed by pulsed laser melting and rapid thermal annealing. The
lithographically patterned GaNxAs1-x regions are imaged by ballistic electron emission microscopy
BEEM . By analyzing the BEEM spectra of the locally confined dots, we observe the decrease in
the Schottky barrier height with nitrogen incorporation. The second derivatives of BEEM currents
from unpatterned GaNxAs1-x films exhibit a decrease in -like thresholds as the nitrogen
concentration increases. The composition dependence of the thresholds agrees well with that of
previously studied low temperature molecular beam epitaxy grown alloys. © 2008 American
Institute of Physics. DOI: 10.1063/1.2982424
Highly mismatched semiconductor alloys HMAs have
become important due to their dramatic changes in electronic
properties from the host materials and motivated many po-
tential technological applications.1
GaNxAs1-x is a HMA
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