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Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+ implantation followed by pulsed laser melting
 

Summary: Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+
implantation followed by pulsed laser melting
Taeseok Kim,a
Michael J. Aziz, and Venkatesh Narayanamurti
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA
Received 16 July 2008; accepted 26 August 2008; published online 12 September 2008
We present measurements on two dimensionally patterned GaNxAs1-x dots fabricated in a GaAs
matrix using ion implantation followed by pulsed laser melting and rapid thermal annealing. The
lithographically patterned GaNxAs1-x regions are imaged by ballistic electron emission microscopy
BEEM . By analyzing the BEEM spectra of the locally confined dots, we observe the decrease in
the Schottky barrier height with nitrogen incorporation. The second derivatives of BEEM currents
from unpatterned GaNxAs1-x films exhibit a decrease in -like thresholds as the nitrogen
concentration increases. The composition dependence of the thresholds agrees well with that of
previously studied low temperature molecular beam epitaxy grown alloys. 2008 American
Institute of Physics. DOI: 10.1063/1.2982424
Highly mismatched semiconductor alloys HMAs have
become important due to their dramatic changes in electronic
properties from the host materials and motivated many po-
tential technological applications.1
GaNxAs1-x is a HMA

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science