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Strain-stabilized solid phase epitaxy of SiGe on Si Jennifer F. Sage, William Barvosa-Carter,a
 

Summary: Strain-stabilized solid phase epitaxy of Si­Ge on Si
Jennifer F. Sage, William Barvosa-Carter,a
and Michael J. Aziz
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Received 5 February 2006; accepted 28 March 2006; published online 14 June 2006
We compare solid phase epitaxial growth of amorphous Si­Ge alloys created by Ge ion implantation
into Si with and without the imposition of 0.5 GPa of externally applied biaxial tensile stress.
External loading stabilizes the growth front against roughening, resulting in a doubling of the
maximum reported Ge concentration for stable growth to 14 at. %. The externally applied stress
appears to superpose with the intrinsic compositional stress and indicates a threshold of
approximately 0.6 GPa for interface breakdown. This principle is expected to be applicable to
expanding the composition range for stable growth of other semiconductor alloy combinations by
other growth techniques. © 2006 American Institute of Physics. DOI: 10.1063/1.2200448
I. INTRODUCTION
Band-gap engineering using compositionally or me-
chanically strained semiconductor layers has become a use-
ful tool for device designers looking to extend the capabili-
ties of Si-based semiconductor devices.1
As a result, an
increasing number of Si-based architectures involving

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science