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Refractive indices of ZnSiN2 on r-plane sapphire Department of Mathematics, University of California, Los Angeles, Los Angeles, California 90095
 

Summary: Refractive indices of ZnSiN2 on r-plane sapphire
B. P. Cook
Department of Mathematics, University of California, Los Angeles, Los Angeles, California 90095
H. O. Everitt
Department of Physics, Duke University, Durham, North Carolina 27708
and U.S. Army Research Office, Research Triangle Park, North Carolina 27709
I. Avrutsky
Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202
A. Osinskya
Science and Technology Group, Corning Inc., Corning, New York 14831
A. Cai and J. F. Muthb
Department of Electrical and Computer Engineering, North Carolina State University,
Raleigh, North Carolina 27695-7911
Received 6 July 2004; accepted 16 December 2004; published online 14 March 2005
IIIVN2 wide band gap semiconductors such as ZnSiN2, ZnGeN2, and ZnSiGeN2 have potential
uses for nonlinear materials and as lattice matching compounds for the growth of SiC and GaN
devices. In this study, the dispersion of the TE and TM indices of refraction has been measured
systematically using the prism coupling technique for an orthorhombic ZnSiN2 epitaxial layer
grown on r-plane sapphire. The resulting index dispersion is extracted from the measured optical
modes using a layered biaxial waveguide analysis, which shows that although the ZnSiN2 crystal is

  

Source: Avrutsky, Ivan - Department of Electrical and Computer Engineering, Wayne State University

 

Collections: Engineering