| | |
Summary: Interfacial roughening during solid phase epitaxy: Interaction of dopant,
stress, and anisotropy effects
William Barvosa-Cartera)
and Michael J. Azizb)
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
A.-V. Phan
Department of Mechanical Engineering, University of South Alabama, Mobile, Alabama 366880002
T. Kaplan and L. J. Gray
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
(Received 7 October 2003; accepted 19 July 2004)
The effects of externally applied stress and rate-enhancing dopants on interfacial roughness during
the solid phase epitaxial growth of ion-implantation-doped Si are investigated using cross-sectional
transmission electron microscopy and time-resolved reflectivity. We find long-wavelength
roughness in the absence of an applied stress that arises solely from the dopant-gradient. With the
addition of a compressive stress, the interface roughens further with an enhanced magnitude and a
dramatically reduced wavelength. We discuss the experimental results in the context of a simulation
that includes our current understanding of stress, dopant-gradient, and interface anisotropy effects.
We find a rich interplay between these effects in determining growth morphology evolution, and
demonstrate the successes and current limitations of the model. © 2004 American Institute of
Physics. [DOI: 10.1063/1.1790580]
|
