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866 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 25, NO. 3, MARCH 2007 SiGeC/Si Electrooptic Modulators
 

Summary: 866 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 25, NO. 3, MARCH 2007
SiGeC/Si Electrooptic Modulators
Martin F. Schubert, Student Member, IEEE, and Farhan Rana, Member, IEEE
Abstract--The addition of carbon to silicon-germanium al-
loys provides the ability to lattice match thick layers with high
germanium composition to silicon substrates. Thick strain-free
silicon-germanium-carbon (SiGeC) layers on silicon allow the de-
sign of optical waveguides that have large optical mode overlap
with the waveguide core. In addition, SiGeC/Si heterostructures
enable strong confinement of large electron and hole concentra-
tions. The combination of tightly confined carriers and photons
can be used to realize high-performance broadband electroop-
tic modulators based on carrier density-induced refractive index
changes. We show that modulators with lengths around 30 Ám and
turn-on times below 0.2 ns are possible with optimized designs.
Index Terms--Device modeling, integrated optics, optical
modulator, plasma dispersion effect, silicon optoelectronics.
I. INTRODUCTION
THE ADVANTAGES of CMOS-compatible manufactur-
ing and promise of integration with advanced electronics

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering