Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Abstract--The MOS gate capacitance model presented here is determined by directly solving the coupled Poisson equations on
 

Summary: Abstract-- The MOS gate capacitance model presented here is
determined by directly solving the coupled Poisson equations on
the poly and silicon sides, and includes the polysilicon (poly) gate
depletion effect. Our compact gate capacitance model exhibits an
excellent fit with measured data and parameter values extracted
from data are physically acceptable. The data are collected from
0.5, 0.35, 0.25 and 0.18m CMOS technologies.
Index Terms--Device modeling, gate capacitance, MOSFETs,
polysilicon depletion effect.
I. INTRODUCTION
The assumption in earlier MOS device modeling
approaches is to treat the gate as a perfect conductor which
would not deplete because the poly is heavily doped compared
to the transistor channel. This assumption of a perfect
conductor is no longer valid for current deep sub-micron
processes. As the oxide thickness gets smaller, the silicon
doping in the channel is increased to allow suitable channel
control and these circumstances generate higher poly
depletion at the gate, [1-4]. The performance degradations of
the MOS device, reduced channel charge and gate capacitance

  

Source: Abebe, Henok - Department of Physics and Astronomy, California State University, Los Angeles

 

Collections: Physics