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Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2
 

Summary: Thermal Stability of MOCVD and HVPE GaN Layers
in H2, HCl, NH3 and N2
M. A. Mastro1
) (a), O. M. Kryliouk (a), M. D. Reed (a), T. J. Anderson (a),
A. Davydov (b), and A. Shapiro (b)
(a) Department of Chemical Engineering, University of Florida, Gainesville, FL, USA
(b) Metallurgy Division, NIST, Gaithersburg, MD, USA
(Received July 25, 2001; accepted July 30, 2001)
Subject classification: 68.55.Jk; 68.60.Dv; 81.15.Gh; S7.14
This work represents a complete study of GaN annealed in H2, HCl, NH3 and N2. The GaN ther-
mal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films
were found to obey a dissociative sublimation mechanism with only gaseous species forming, while
the HVPE films reacted with ambient gases to form condensed Ga in addition to the gaseous
species. Differences in crystal quality for MOCVD and HVPE samples resulting from the different
growth mechanisms account for the observed difference. This analysis of the thermal stability of
GaN is extended to include how polarity affects the thermal behavior of GaN during growth and
annealing of MOCVD and HVPE films.
1. Introduction The recent development of GaN based blue light emitting diodes
(LEDs) and lasers [1] and high power/high temperature electronics [2] has led to a
flurry of research in the III-nitrides. The concept of thermal stability is intricately inter-

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science