Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Temperature dependence of resistivity and Hall coefficient in strongly disordered NbN thin films Madhavi Chand,1 Archana Mishra,1,2 Y. M. Xiong,3 Anand Kamlapure,1 S. P. Chockalingam,1 John Jesudasan,1
 

Summary: Temperature dependence of resistivity and Hall coefficient in strongly disordered NbN thin films
Madhavi Chand,1 Archana Mishra,1,2 Y. M. Xiong,3 Anand Kamlapure,1 S. P. Chockalingam,1 John Jesudasan,1
Vivas Bagwe,1 Mintu Mondal,1 P. W. Adams,3 Vikram Tripathi,1 and Pratap Raychaudhuri1,*
1Tata Institute of Fundamental Research, Homi Bhabha Rd., Colaba, Mumbai 400005, India
2IIC, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667, India
3Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, USA
Received 4 August 2009; revised manuscript received 22 September 2009; published 20 October 2009
We report the temperature dependence of resistivity and Hall coefficient RH in the normal state of
homogeneously disordered epitaxial NbN thin films with kFl 1.6810.12. The superconducting transition
temperature Tc of these films varies from 2.7 to 16.8 K. While our least disordered film displays usual
metallic behavior, for all the films with kFl 8.13, both
d
dT and
dRH
dT are negative up to 285 K. We observe that
RH T varies linearly with T for all the films and
RH T -RH 285 K
RH 285 K =
T - 285 K
285 K , where =0.68 0.11.

  

Source: Adams, Philip W. - Department of Physics and Astronomy, Louisiana State University
Raychaudhuri, Pratap - Department of Condensed Matter Physics and Material Sciences, Tata Institute of Fundamental Research

 

Collections: Materials Science; Physics