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DEVICE TECHNOLOGY In this work, we fabricated diodes and transistors, conventional and the ones
 

Summary: 93
CHAPTER IV
DEVICE TECHNOLOGY
In this work, we fabricated diodes and transistors, conventional and the ones
having universal contact adopting identical processes. The voltage rating of these
devices is approximately same as the devices, which have been simulated in previous
sections. The material, technology and process flow of the fabricated diodes and
transistors is described in following sections.
4.1 RAW MATERIAL
The reverse voltage capability of the diode and transistor is the sole factor for
deciding the resistivity and width of the raw material. The current rating depends upon
the length of the emitter periphery and can be increased by proper design of fingers, cells
or area of the device. To study the universal contact in low (~150) and high voltage
(~1000V) devices, the following materials were obtained:
For a 150V devices nn+
Epitaxial
Resistivity 3.4 4.6 -cm
Phosphorous doped Epi thickness 15 m
Substrate (Sb doped), Resistivity 0.015 -cm
Substrate thickness 310 20 m

  

Source: Anand, Raghubir Singh - Department of Electrical Engineering, Indian Institute of Technology Kanpur

 

Collections: Engineering