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High capacity oxide/ferroelectric/oxide stacks for on-chip charge storage S. Zhong and S. P. Alpaya
 

Summary: High capacity oxide/ferroelectric/oxide stacks for on-chip charge storage
S. Zhong and S. P. Alpaya
Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269
and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269
J. V. Mantese
Delphi Research Laboratories, Shelby Township, Michigan 48315
Received 11 April 2006; accepted 7 June 2006; published online 25 July 2006
A thermodynamic model coupled with an electrostatic analysis of dielectric-ferroelectric-dielectric
sandwich structures shows that high capacitance densities can be achieved when the total dielectric
thickness reaches a critical fraction. For such cases, the induced polarization in the linear dielectrics
e.g., SiO2, Ta2O5, HfO2, Al2O3, and ZrO2 increases the overall permittivity until the internal
electric field in the ferroelectric layer suppresses the spontaneous polarization of the ferroelectric.
Beyond this critical fraction, the ferroelectric layer can no longer induce polarization in the
dielectric layers. We specifically determine the critical fraction required for Ba1-xSrxTiO3
0 x 0.2 and Pb1-xZrxTiO3 0 x 0.5 solid solutions. 2006 American Institute of Physics.
DOI: 10.1063/1.2236265
As the critical dimensions of integrated circuits ICs
continue to shrink into the nanometer range, it becomes
increasingly more difficult for IC manufacturers to use con-
ventional silicon-based materials to form the high capaci-

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science