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Ion-beam synthesis and stability of GaAs nanocrystals in silicon C. W. White, J. D. Budai, J. G. Zhu, and S. P. Withrow
 

Summary: Ion-beam synthesis and stability of GaAs nanocrystals in silicon
C. W. White, J. D. Budai, J. G. Zhu, and S. P. Withrow
Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6057
M. J. Aziz
Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138
Received 27 November 1995; accepted for publication 15 February 1996
Sequential implantation of Ga and As into silicon followed by thermal annealing has been used to
synthesize GaAs buried inside silicon. The GaAs exists in the form of nanocrystals which are
three-dimensionally oriented with respect to the silicon matrix. Thermodynamic criteria which are
important in determining whether the desired compound will form are discussed. 1996
American Institute of Physics. S0003-6951 96 01517-2
High-dose ion implantation and annealing have been
used previously to synthesize buried compounds in silicon.
For example, Co or other metals Fe, Ni, etc. can be im-
planted into Si and annealed to form buried silicides.1,2
Ter-
nary metal silicides also have been formed by sequential ion
implantation of two metal ions into silicon.3
Buried
SiO2 layers have been formed by high-dose oxygen

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science