Summary: INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF MICROMECHANICS AND MICROENGINEERING
J. Micromech. Microeng. 15 (2005) 2105­2112 doi:10.1088/0960-1317/15/11/016
Characterization of high-Q spiral
inductors on thick insulator-on-silicon
Mina Rais-Zadeh and Farrokh Ayazi
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta,
GA 30332-0250, USA
Received 14 June 2005, in final form 16 August 2005
Published 23 September 2005
Online at stacks.iop.org/JMM/15/2105
Abstract
This paper reports on the fabrication and characterization of high quality
factor (Q) copper (Cu) inductors with thick insulator on standard silicon (Si)
substrate ( = 10­20 cm). The thickness and the area of the insulating
layer are optimized for high Q by fabricating inductors on very thick
(50 µm) embedded silicon dioxide (SiO2) islands and 4­20 µm thick
PECVD SiO2 coated standard Si substrate. The effect of the dielectric
permittivity is verified by comparing the performances of identical inductors
fabricated on 20 µm thick SiO2 and 20 µm thick low-k polymer coated
standard Si substrate. Measurement results show saturation behavior for the

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

Collections: Engineering