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INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF MICROMECHANICS AND MICROENGINEERING J. Micromech. Microeng. 15 (2005) 21052112 doi:10.1088/0960-1317/15/11/016
 

Summary: INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF MICROMECHANICS AND MICROENGINEERING
J. Micromech. Microeng. 15 (2005) 21052112 doi:10.1088/0960-1317/15/11/016
Characterization of high-Q spiral
inductors on thick insulator-on-silicon
Mina Rais-Zadeh and Farrokh Ayazi
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta,
GA 30332-0250, USA
Received 14 June 2005, in final form 16 August 2005
Published 23 September 2005
Online at stacks.iop.org/JMM/15/2105
Abstract
This paper reports on the fabrication and characterization of high quality
factor (Q) copper (Cu) inductors with thick insulator on standard silicon (Si)
substrate ( = 1020 cm). The thickness and the area of the insulating
layer are optimized for high Q by fabricating inductors on very thick
(50 m) embedded silicon dioxide (SiO2) islands and 420 m thick
PECVD SiO2 coated standard Si substrate. The effect of the dielectric
permittivity is verified by comparing the performances of identical inductors
fabricated on 20 m thick SiO2 and 20 m thick low-k polymer coated
standard Si substrate. Measurement results show saturation behavior for the

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering